Director Tang Guangfu Attends the Ninth International Academic Forum of the Power Semiconductor Industry Alliance and Delivers Keynote Speech

On October 16, the Ninth International Academic Forum of the Power Semiconductor Industry Alliance and the Yixing Power Semiconductor Industry Docking Conference were held in Yixing, Jiangsu Province. The event aimed to jointly explore industry development trends, facilitate industrial connectivity, and share cutting-edge technological achievements, thereby injecting new momentum into the high-quality development of China's power semiconductor industry. Attending the event were Ding Rongjun, academician of the Chinese Academy of Engineering (CAE), Chief Scientist at CRRC Corporation Limited, and Chairman of the Power Semiconductor Industry Alliance; Qin Xiaohua, Deputy Director of the Wuxi Municipal Bureau of Industry and Information Technology; and Hu Xiaojian,Mayor of Yixing City.Other notable attendees included CAE academicians Tang Guangfu and Wu Hanming; Deputy General Manager Xiao Qiang of Zhuzhou CRRC Times Semiconductor Co., Ltd.;Professor Sun Weifeng from Southeast University; Professor Liang Lin from Huazhong University of Science and Technology; Professor Liu Jian from Hunan University; Associate Professor Guo Qing from Zhejiang University; Chief Scientist Peter Gammon of the UK EPSRC National Research Platform for Power Electronics; Professor Long Teng from the University of Cambridge; and President Tanya Trajkovic of Cambridge Microelectronics Limited. These individuals delivered keynote speeches providing significant references for the strategic development of China's power semiconductor industry.

Director Tang’s report,titled "Building a Next-Generation Power System to Support Low-Carbon Energy Transition," delved into China's green energy development strategy.It comprehensively analyzed the challenges faced in building a next-generation power system and key characteristics of the system, emphasizing the pivotal and pioneering role of high-voltage, high-power semiconductor devices in constructing such a system.